NTD5804N, NTDV5804N
TYPICAL PERFORMANCE CHARACTERISTICS
10
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 12. Thermal Response
ORDERING INFORMATION
Order Number
NTD5804NG
NTD5804NT4G
NTDV5804NT4G
Package
IPAK (Straight Lead DPAK)
(Pb ? Free)
DPAK
(Pb ? Free)
DPAK
(Pb ? Free)
Shipping ?
75 Units / Rail
2500 / Tape & Reel
2500 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
相关PDF资料
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相关代理商/技术参数
NTD5805N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 51 A, Single N−Channel, DPAK
NTD5805N_12 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 51 A, Single N.Channel, DPAK
NTD5805NG 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 51 A, Single N−Channel, DPAK
NTD5805NT4G 功能描述:MOSFET NFET DPAK 40V 51A 9.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD5806N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK
NTD5806NG 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK
NTD5806NT4G 功能描述:MOSFET NFET DPAK 40V 33A 19mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD5807N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK